Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

V. A. Volodin; G. N. Kamaev; V. A. Gritsenko; A. A. Gismatulin; A. Chin; M. Vergnat

doi:10.1063/1.5079690

Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films

V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, M. Vergnat

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The p-Si(or n-Si)/GeO[SiO₂] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO₂ and SiO₂ (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO₂] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO₂] or GeO[SiO] films.

Original language	English
Article number	233104
Journal	Applied Physics Letters
Volume	114
Issue number	23
DOIs	https://doi.org/10.1063/1.5079690
State	Published - 10 Jun 2019

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title = "Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films",

abstract = "The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.",

author = "Volodin, {V. A.} and Kamaev, {G. N.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and A. Chin and M. Vergnat",

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doi = "10.1063/1.5079690",

language = "English",

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T1 - Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Chin, A.

AU - Vergnat, M.

PY - 2019/6/10

Y1 - 2019/6/10

N2 - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

AB - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233104

ER -

Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films

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