Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang*, S. T. Van, F. M. Yang, Po-Tsun Liu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.

Original languageEnglish
Pages (from-to)2094-2096
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 22 Mar 2004


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