Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure

T. C. Chang; Po-Tsun Liu; S. T. Yan; F. M. Yang; S. M. Sze

doi:10.1149/1.1850859

Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure

T. C. Chang^*, Po-Tsun Liu, S. T. Yan, F. M. Yang, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiCO film, which is attributed to the high barrier height induced by electron trapping in the SiCO film.

Original language	English
Pages (from-to)	G144-G147
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	2
DOIs	https://doi.org/10.1149/1.1850859
State	Published - 17 Mar 2005

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title = "Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure",

abstract = "The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiCO film, which is attributed to the high barrier height induced by electron trapping in the SiCO film.",

author = "Chang, {T. C.} and Po-Tsun Liu and Yan, {S. T.} and Yang, {F. M.} and Sze, {S. M.}",

year = "2005",

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doi = "10.1149/1.1850859",

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T1 - Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Yan, S. T.

AU - Yang, F. M.

AU - Sze, S. M.

PY - 2005/3/17

Y1 - 2005/3/17

N2 - The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiCO film, which is attributed to the high barrier height induced by electron trapping in the SiCO film.

AB - The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiCO film, which is attributed to the high barrier height induced by electron trapping in the SiCO film.

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U2 - 10.1149/1.1850859

DO - 10.1149/1.1850859

M3 - Article

AN - SCOPUS:14744275579

SN - 0013-4651

VL - 152

SP - G144-G147

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure

Abstract

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