Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang; Tse En Chang; Lu Ping Chiang; Chimoon Huang; Jyh-Chyurn Guo

doi:10.1109/VLSIT.1996.507862

Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang^*, Tse En Chang, Lu Ping Chiang, Chimoon Huang, Jyh-Chyurn Guo

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

Original language	English
Pages (from-to)	232-233
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1996.507862
State	Published - 1 Jan 1996
Event	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 11 Jun 1996 → 13 Jun 1996

Access to Document

10.1109/VLSIT.1996.507862

Cite this

@article{aec3fc6fda3347568f17b22d18b26099,

title = "Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's",

abstract = "Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.",

author = "Ta-Hui Wang and Chang, {Tse En} and Chiang, {Lu Ping} and Chimoon Huang and Jyh-Chyurn Guo",

year = "1996",

month = jan,

day = "1",

doi = "10.1109/VLSIT.1996.507862",

language = "English",

pages = "232--233",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 11-06-1996 Through 13-06-1996",

}

TY - JOUR

T1 - Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

AU - Wang, Ta-Hui

AU - Chang, Tse En

AU - Chiang, Lu Ping

AU - Huang, Chimoon

AU - Guo, Jyh-Chyurn

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

AB - Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

UR - http://www.scopus.com/inward/record.url?scp=0029725248&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.1996.507862

DO - 10.1109/VLSIT.1996.507862

M3 - Conference article

AN - SCOPUS:0029725248

SP - 232

EP - 233

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 11 June 1996 through 13 June 1996

ER -

Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Abstract

Access to Document

Other files and links

Fingerprint

Cite this