Mechanism of stress induced leakage current in Si3N4

V. A. Gritsenko; A. A. Gismatulin; A. P. Baraban; Albert Chin

doi:10.1088/2053-1591/ab1223

Mechanism of stress induced leakage current in Si₃N₄

V. A. Gritsenko, A. A. Gismatulin, A. P. Baraban, Albert Chin

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, the experimental current density versus electric field characteristics of Si₃N₄ before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si₃N₄ before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si₃N₄ before and after the induced stress at traps energies W _t =1.6 eV and W _opt =3.2 eV. The current leakage at different induced stresses in Si₃N₄ is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si₃N₄.

Original language	English
Article number	076401
Journal	Materials Research Express
Volume	6
Issue number	7
DOIs	https://doi.org/10.1088/2053-1591/ab1223
State	Published - 3 Apr 2019

Keywords

SILC
charge transport
traps

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10.1088/2053-1591/ab1223

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@article{cecb37a5d31e463ab8354797246642f2,

title = "Mechanism of stress induced leakage current in Si3N4",

abstract = "In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.",

keywords = "SILC, charge transport, traps",

author = "Gritsenko, {V. A.} and Gismatulin, {A. A.} and Baraban, {A. P.} and Albert Chin",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

month = apr,

day = "3",

doi = "10.1088/2053-1591/ab1223",

language = "English",

volume = "6",

journal = "Materials Research Express",

issn = "2053-1591",

publisher = "IOP Publishing Ltd.",

number = "7",

}

TY - JOUR

T1 - Mechanism of stress induced leakage current in Si3N4

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Baraban, A. P.

AU - Chin, Albert

PY - 2019/4/3

Y1 - 2019/4/3

N2 - In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.

AB - In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.

KW - SILC

KW - charge transport

KW - traps

UR - http://www.scopus.com/inward/record.url?scp=85066028475&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/ab1223

DO - 10.1088/2053-1591/ab1223

M3 - Article

AN - SCOPUS:85066028475

SN - 2053-1591

VL - 6

JO - Materials Research Express

JF - Materials Research Express

IS - 7

M1 - 076401

ER -

Mechanism of stress induced leakage current in Si₃N₄

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Keywords

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