Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Tien-Sheng Chao*, M. C. Liaw, C. H. Chu, C. Y. Chang, Chao-Hsin Chien, C. P. Hao, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

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Physics & Astronomy