The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 16 Sep 1996|