Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Tien-Sheng Chao; M. C. Liaw; C. H. Chu; C. Y. Chang; Chao-Hsin Chien; C. P. Hao; T. F. Lei

doi:10.1063/1.117484

Mechanism of nitrogen coimplant for suppressing boron penetration in p⁺-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Tien-Sheng Chao^*, M. C. Liaw, C. H. Chu, C. Y. Chang, Chao-Hsin Chien, C. P. Hao, T. F. Lei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The mechanism of the nitrogen co-implant to suppress the boron penetration in p⁺-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF⁺₂ combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.

Original language	English
Pages (from-to)	1781-1782
Number of pages	2
Journal	Applied Physics Letters
Volume	69
Issue number	12
DOIs	https://doi.org/10.1063/1.117484
State	Published - 16 Sep 1996

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title = "Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor",

abstract = "The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.",

author = "Tien-Sheng Chao and Liaw, {M. C.} and Chu, {C. H.} and Chang, {C. Y.} and Chao-Hsin Chien and Hao, {C. P.} and Lei, {T. F.}",

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AU - Chao, Tien-Sheng

AU - Liaw, M. C.

AU - Chu, C. H.

AU - Chang, C. Y.

AU - Chien, Chao-Hsin

AU - Hao, C. P.

AU - Lei, T. F.

PY - 1996/9/16

Y1 - 1996/9/16

N2 - The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.

AB - The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.

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DO - 10.1063/1.117484

M3 - Article

AN - SCOPUS:0000221143

SN - 0003-6951

VL - 69

SP - 1781

EP - 1782

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Mechanism of nitrogen coimplant for suppressing boron penetration in p⁺-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

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