Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement

Yi Jung Chen; Ya-Hsiang Tai; Chun Yi Chang

doi:10.1109/TED.2016.2532465

Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement

Yi Jung Chen, Ya-Hsiang Tai, Chun Yi Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this paper, we investigate the response time of oxygen vacancies on the hysteresis for the amorphous indium-gallium-zinc oxide thin-film transistors. The fast pulse measurement method is used to observe the drain current under the different sweeping speeds of gate voltage to clarify the mechanism of the hysteresis. Effects of light intensity and temperature are also discussed. Based on the results and the analysis, the model of oxygen vacancies is proposed to explain the effect of sweep speed on the hysteresis, which would be important for the devices to be driven in their circuit application.

Original language	English
Article number	7422779
Pages (from-to)	1565-1571
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TED.2016.2532465
State	Published - 1 Apr 2016

Keywords

Amorphous indium-gallium-zinc oxide (a-IGZO)
hysteresis
response time
Thin-film transistors (TFTs).

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10.1109/TED.2016.2532465

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title = "Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement",

abstract = "In this paper, we investigate the response time of oxygen vacancies on the hysteresis for the amorphous indium-gallium-zinc oxide thin-film transistors. The fast pulse measurement method is used to observe the drain current under the different sweeping speeds of gate voltage to clarify the mechanism of the hysteresis. Effects of light intensity and temperature are also discussed. Based on the results and the analysis, the model of oxygen vacancies is proposed to explain the effect of sweep speed on the hysteresis, which would be important for the devices to be driven in their circuit application.",

keywords = "Amorphous indium-gallium-zinc oxide (a-IGZO), hysteresis, response time, Thin-film transistors (TFTs).",

author = "Chen, \{Yi Jung\} and Ya-Hsiang Tai and Chang, \{Chun Yi\}",

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T1 - Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement

AU - Chen, Yi Jung

AU - Tai, Ya-Hsiang

AU - Chang, Chun Yi

PY - 2016/4/1

Y1 - 2016/4/1

N2 - In this paper, we investigate the response time of oxygen vacancies on the hysteresis for the amorphous indium-gallium-zinc oxide thin-film transistors. The fast pulse measurement method is used to observe the drain current under the different sweeping speeds of gate voltage to clarify the mechanism of the hysteresis. Effects of light intensity and temperature are also discussed. Based on the results and the analysis, the model of oxygen vacancies is proposed to explain the effect of sweep speed on the hysteresis, which would be important for the devices to be driven in their circuit application.

AB - In this paper, we investigate the response time of oxygen vacancies on the hysteresis for the amorphous indium-gallium-zinc oxide thin-film transistors. The fast pulse measurement method is used to observe the drain current under the different sweeping speeds of gate voltage to clarify the mechanism of the hysteresis. Effects of light intensity and temperature are also discussed. Based on the results and the analysis, the model of oxygen vacancies is proposed to explain the effect of sweep speed on the hysteresis, which would be important for the devices to be driven in their circuit application.

KW - Amorphous indium-gallium-zinc oxide (a-IGZO)

KW - hysteresis

KW - response time

KW - Thin-film transistors (TFTs).

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SP - 1565

EP - 1571

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 7422779

ER -

Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement

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Keywords

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