Abstract
In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiOx.
Original language | English |
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Article number | 6879276 |
Pages (from-to) | 1019-1021 |
Number of pages | 3 |
Journal | Ieee Electron Device Letters |
Volume | 35 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2014 |
Keywords
- Double layer
- Gibbs free energy
- Resistive switching
- Rram
- Zno
- Zro