Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

Bing Yue Tsui; Yu Chen Chang; Yi Ju Chen

doi:10.1109/VLSI-TSA48913.2020.9203673

Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

Bing Yue Tsui^*, Yu Chen Chang, Yi Ju Chen

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	74-75
Number of pages	2
ISBN (Electronic)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203673
State	Published - Aug 2020
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Country/Territory	Taiwan
City	Hsinchu
Period	10/08/20 → 13/08/20

Access to Document

10.1109/VLSI-TSA48913.2020.9203673

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Tsui, B. Y., Chang, Y. C., & Chen, Y. J. (2020). Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 74-75). Article 9203673 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203673

Tsui, Bing Yue ; Chang, Yu Chen ; Chen, Yi Ju. / Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 74-75 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

@inproceedings{464429fb7ccb4581b62ba80ebc6d2856,

title = "Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery",

abstract = "Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.",

author = "Tsui, {Bing Yue} and Chang, {Yu Chen} and Chen, {Yi Ju}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

year = "2020",

month = aug,

doi = "10.1109/VLSI-TSA48913.2020.9203673",

language = "English",

series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "74--75",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

address = "美國",

}

Tsui, BY, Chang, YC & Chen, YJ 2020, Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203673, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 74-75, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203673

Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery. / Tsui, Bing Yue; Chang, Yu Chen; Chen, Yi Ju.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 74-75 9203673 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

AU - Tsui, Bing Yue

AU - Chang, Yu Chen

AU - Chen, Yi Ju

PY - 2020/8

Y1 - 2020/8

N2 - Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.

AB - Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=85093665207&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA48913.2020.9203673

DO - 10.1109/VLSI-TSA48913.2020.9203673

M3 - Conference contribution

AN - SCOPUS:85093665207

T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

SP - 74

EP - 75

BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Y2 - 10 August 2020 through 13 August 2020

ER -

Tsui BY, Chang YC, Chen YJ. Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 74-75. 9203673. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203673

Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

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