Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai; C. W. Tsai; C. T. Yen; C. L. Liu; S. Y. Lee; H. M. Lien; S. L. Lung; Chao-Hsin Chien; T. B. Wu; Ta-Hui Wang; Rich Liu; C. Y. Lu

doi:10.1109/IPFA.2004.1345565

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai^*, C. W. Tsai, C. T. Yen, C. L. Liu, S. Y. Lee, H. M. Lien, S. L. Lung, Chao-Hsin Chien, T. B. Wu, Ta-Hui Wang, Rich Liu, C. Y. Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

Original language	English
Pages	123-126
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2004.1345565
State	Published - Jul 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	5/07/04 → 8/07/04

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10.1109/IPFA.2004.1345565

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Lai, S. C., Tsai, C. W., Yen, C. T., Liu, C. L., Lee, S. Y., Lien, H. M., Lung, S. L., Chien, C.-H., Wu, T. B., Wang, T.-H., Liu, R., & Lu, C. Y. (2004). Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory. 123-126. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan. https://doi.org/10.1109/IPFA.2004.1345565

@conference{e4576ed0d9de4cb7948be865941020a3,

title = "Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory",

abstract = "Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.",

author = "Lai, {S. C.} and Tsai, {C. W.} and Yen, {C. T.} and Liu, {C. L.} and Lee, {S. Y.} and Lien, {H. M.} and Lung, {S. L.} and Chao-Hsin Chien and Wu, {T. B.} and Ta-Hui Wang and Rich Liu and Lu, {C. Y.}",

year = "2004",

month = jul,

doi = "10.1109/IPFA.2004.1345565",

language = "English",

pages = "123--126",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Lai, SC, Tsai, CW, Yen, CT, Liu, CL, Lee, SY, Lien, HM, Lung, SL, Chien, C-H, Wu, TB, Wang, T-H, Liu, R & Lu, CY 2004, 'Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory', Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, 5/07/04 - 8/07/04 pp. 123-126. https://doi.org/10.1109/IPFA.2004.1345565

TY - CONF

T1 - Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

AU - Lai, S. C.

AU - Tsai, C. W.

AU - Yen, C. T.

AU - Liu, C. L.

AU - Lee, S. Y.

AU - Lien, H. M.

AU - Lung, S. L.

AU - Chien, Chao-Hsin

AU - Wu, T. B.

AU - Wang, Ta-Hui

AU - Liu, Rich

AU - Lu, C. Y.

PY - 2004/7

Y1 - 2004/7

N2 - Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

AB - Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

UR - http://www.scopus.com/inward/record.url?scp=20044362189&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2004.1345565

DO - 10.1109/IPFA.2004.1345565

M3 - Paper

AN - SCOPUS:20044362189

SP - 123

EP - 126

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

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