Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

M. C. Wang; S. W. Tsao; T. C. Chang; Y. P. Lin; Po-Tsun Liu; J. R. Chen

doi:10.1016/j.sse.2010.04.006

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

M. C. Wang, S. W. Tsao, T. C. Chang, Y. P. Lin, Po-Tsun Liu, J. R. Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The photo leakage current (I_PLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I_PLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E_F). Experimental results show the I_PLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E_a) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E_F.

Original language	English
Pages (from-to)	1485-1487
Number of pages	3
Journal	Solid-State Electronics
Volume	54
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2010.04.006
State	Published - 1 Nov 2010

Keywords

A-Si:H TFTs
Mechanical strain
Photo leakage current

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10.1016/j.sse.2010.04.006

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title = "Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors",

abstract = "The photo leakage current (IPLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger IPLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (EF). Experimental results show the IPLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (Ea) of a-Si:H TFTs under the outward bending strain also confirmed the shift of EF.",

keywords = "A-Si:H TFTs, Mechanical strain, Photo leakage current",

author = "Wang, {M. C.} and Tsao, {S. W.} and Chang, {T. C.} and Lin, {Y. P.} and Po-Tsun Liu and Chen, {J. R.}",

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T1 - Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

AU - Wang, M. C.

AU - Tsao, S. W.

AU - Chang, T. C.

AU - Lin, Y. P.

AU - Liu, Po-Tsun

AU - Chen, J. R.

PY - 2010/11/1

Y1 - 2010/11/1

N2 - The photo leakage current (IPLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger IPLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (EF). Experimental results show the IPLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (Ea) of a-Si:H TFTs under the outward bending strain also confirmed the shift of EF.

AB - The photo leakage current (IPLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger IPLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (EF). Experimental results show the IPLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (Ea) of a-Si:H TFTs under the outward bending strain also confirmed the shift of EF.

KW - A-Si:H TFTs

KW - Mechanical strain

KW - Photo leakage current

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DO - 10.1016/j.sse.2010.04.006

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SP - 1485

EP - 1487

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

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Keywords

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