@inproceedings{b7581168e4f1418696e1e60129484633,
title = "Measuring the edge recombination velocity of monolayer semiconductors",
abstract = "Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing these materials for high performance electronic and optoelectronic devices.1-5 WS2 monolayers patterned into disks of varying diameters are used to experimentally determine the influence of edges on their optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on non-radiative recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the non-radiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization technique towards experimental explorations of edge passivation methods for 2D materials.",
author = "Peida Zhao and Matin Amani and Lien, {Der Hsien} and Ahn, {Geun Ho} and Daisuke Kiriya and Mastandrea, {James P.} and Ager, {Joel W.} and Eli Yablonovitch and Chrzan, {Daryl C.} and Ali Javey",
year = "2017",
month = jun,
day = "28",
doi = "10.1109/E3S.2017.8246197",
language = "English",
series = "2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1",
booktitle = "2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings",
address = "United States",
note = "5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 ; Conference date: 19-10-2017 Through 20-10-2017",
}