Measuring the Edge Recombination Velocity of Monolayer Semiconductors

Peida Zhao; Matin Amani; Der-Hsien Lien; Geun Ho Ahn; Daisuke Kiriya; James P. Mastandrea; Joel W. Ager; Eli Yablonovitch; Daryl C. Chrzan; Ali Javey

doi:10.1021/acs.nanolett.7b01770

Measuring the Edge Recombination Velocity of Monolayer Semiconductors

Peida Zhao, Matin Amani, Der-Hsien Lien, Geun Ho Ahn, Daisuke Kiriya, James P. Mastandrea, Joel W. Ager, Eli Yablonovitch, Daryl C. Chrzan, Ali Javey^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS₂ monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ_effective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS₂ monolayer disks yield an ERV ∼ 4 × 10⁴ cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

Original language	English
Pages (from-to)	5356-5360
Number of pages	5
Journal	Nano letters
Volume	17
Issue number	9
DOIs	https://doi.org/10.1021/acs.nanolett.7b01770
State	Published - 13 Sep 2017

Keywords

edge effects
edge recombination velocity
quantum yield
Transition metal dichalcogenide
WS

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title = "Measuring the Edge Recombination Velocity of Monolayer Semiconductors",

abstract = "Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.",

keywords = "edge effects, edge recombination velocity, quantum yield, Transition metal dichalcogenide, WS",

author = "Peida Zhao and Matin Amani and Der-Hsien Lien and Ahn, {Geun Ho} and Daisuke Kiriya and Mastandrea, {James P.} and Ager, {Joel W.} and Eli Yablonovitch and Chrzan, {Daryl C.} and Ali Javey",

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T1 - Measuring the Edge Recombination Velocity of Monolayer Semiconductors

AU - Zhao, Peida

AU - Amani, Matin

AU - Lien, Der-Hsien

AU - Ahn, Geun Ho

AU - Kiriya, Daisuke

AU - Mastandrea, James P.

AU - Ager, Joel W.

AU - Yablonovitch, Eli

AU - Chrzan, Daryl C.

AU - Javey, Ali

PY - 2017/9/13

Y1 - 2017/9/13

N2 - Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

AB - Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

KW - edge effects

KW - edge recombination velocity

KW - quantum yield

KW - Transition metal dichalcogenide

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JF - Nano letters

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Measuring the Edge Recombination Velocity of Monolayer Semiconductors

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Keywords

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