Mapping Oxidation and Wafer Cleaning to Device Characteristics Using Physics-Assisted Machine Learning

Sparsh Pratik, Po Ning Liu, Jun Ota, Yen Liang Tu, Guan Wen Lai, Ya Wen Ho, Zheng Kai Yang, Tejender Singh Rawat, Albert S. Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

It is always highly desired to have a well-defined relationship between the chemistry in semiconductor processing and the device characteristics. With the shrinkage of technology nodes in the semiconductors roadmap, it becomes more complicated to understand the relation between the device electrical characteristics and the process parameters such as oxidation and wafer cleaning procedures. In this work, we use a novel machine learning approach, i.e., physics-assisted multitask and transfer learning, to construct a relationship between the process conditions and the device capacitance voltage curves. While conventional semiconductor processes and device modeling are based on a physical model, recently, the machine learning-based approach or hybrid approaches have drawn significant attention. In general, a huge amount of data is required to train a machine learning model. Since producing data in the semiconductor industry is not an easy task, physics-assisted artificial intelligence has become an obvious choice to resolve these issues. The predicted C-V uses the hybridization of physics, and machine learning provides improvement while the coefficient of determination (R2) is 0.9442 for semisupervised multitask learning (SS-MTL) and 0.9253 for transfer learning (TL), referenced to 0.6108 in the pure machine learning model using multilayer perceptrons. The machine learning architecture used in this work is capable of handling data sparsity and promotes the usage of advanced algorithms to model the relationship between complex chemical reactions in semiconductor manufacturing and actual device characteristics. The code is available at https://github.com/albertlin11/moscapssmtl.

Original languageEnglish
Pages (from-to)933-946
Number of pages14
JournalACS Omega
Volume7
Issue number1
DOIs
StatePublished - 11 Jan 2022

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