Management of Phonon Transport in Lateral Direction for Gap-controlled Si Nanopillar/SiGe Interlayer Composite Materials

Daisuke Ohori, Min Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming Yi Lee, Kazuhiko Endo, Yiming Li, Jenn Hwan Tarng, Yao Jen Lee, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The phonon transport in the lateral direction for gap-controlled Si nanopillar/SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite layer showed 1/100 times lower thermal conductivity than Si bulk. Then, the phonon transport behavior in lateral direction could be predicted by the combination between 3-omega measurement method for thermal conductivity and Landauer approach for phonon transport in Si NP/Si0.7Ge0.3 interlayer composite structure. We found that the NP structure could regulate the phonon transport in the lateral direction by changing the NP gaps. As such, this structure achieves the first step toward phonon transport management in the same electron transportation direction of planar-type MOSFETs and represents a promising solution to heat generation for advanced CMOS devices.

Original languageEnglish
JournalIEEE Open Journal of Nanotechnology
DOIs
StateAccepted/In press - 2021

Keywords

  • Conductivity
  • Heating systems
  • MOSFET
  • neutral beam etching
  • phonon transport control
  • Phonons
  • Scattering
  • si nanopillar
  • Silicon
  • simulation
  • Thermal conductivity

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