Majority Carrier Current Characteristics in Large-Grain Polycrystalline-Silicon-Schottky-Barrier Solar Cells

E. S. Yang; E. K. Poon; C. M. Wu; Wei Hwang; H. C. Card

doi:10.1109/T-ED.1981.20500

Majority Carrier Current Characteristics in Large-Grain Polycrystalline-Silicon-Schottky-Barrier Solar Cells

E. S. Yang, E. K. Poon, C. M. Wu, Wei Hwang, H. C. Card^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E₀. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

Original language	English
Pages (from-to)	1131-1135
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1981.20500
State	Published - 1 Jan 1981

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abstract = "A theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.",

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year = "1981",

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T1 - Majority Carrier Current Characteristics in Large-Grain Polycrystalline-Silicon-Schottky-Barrier Solar Cells

AU - Yang, E. S.

AU - Poon, E. K.

AU - Wu, C. M.

AU - Hwang, Wei

AU - Card, H. C.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - A theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

AB - A theoretical analysis is made of the nonexponential current-voltage characteristics observed in Al-poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider a grain boundary effectively in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density, and a neutral level E0. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

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U2 - 10.1109/T-ED.1981.20500

DO - 10.1109/T-ED.1981.20500

M3 - Article

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SP - 1131

EP - 1135

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 10

ER -

Majority Carrier Current Characteristics in Large-Grain Polycrystalline-Silicon-Schottky-Barrier Solar Cells

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