Majority- and minority-carrier traps in Te-doped AlInP

Y. R. Wu; W. J. Sung; Wei-I Lee

doi:10.1063/1.123000

Majority- and minority-carrier traps in Te-doped AlInP

Y. R. Wu^*, W. J. Sung, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24±0.05 and 0.25±0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect.

Original language	English
Pages (from-to)	284-286
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	2
DOIs	https://doi.org/10.1063/1.123000
State	Published - 11 Jan 1999

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abstract = "The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24±0.05 and 0.25±0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect.",

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AU - Wu, Y. R.

AU - Sung, W. J.

AU - Lee, Wei-I

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N2 - The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24±0.05 and 0.25±0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect.

AB - The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24±0.05 and 0.25±0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Majority- and minority-carrier traps in Te-doped AlInP

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