Magneto-transport flipping induced by surface oxidation in Co films

T. Y. Chung, Shih-ying Hsu

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We have performed low temperature magnetoresistance (MR) and magnetization measurements for a series of thin Co films with different degrees of oxidation to investigate the role of surface oxidation on magnetic properties. For films with less oxidation, magneto-transport exhibits the typical anisotropic magnetoresistance behavior. However, magneto-transport flips completely in films with severe oxidation. The inverse MR is replaced by the normal MR when the applied magnetic field is along the current. The normal MR is changed to the inverse MR when the applied magnetic field is perpendicular to the current. Since the disorder will enhance the spin-orbital interaction and electron-electron interaction in thin films, we suggest that both mechanisms may be responsible for the flipping in anisotropic MR induced by surface oxidation.

Original languageEnglish
Article number042063
JournalJournal of Physics: Conference Series
Issue number4
StatePublished - 1 Jan 2009


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