MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al 2O3 blocking layer to overcome erase saturation

Sheng Chih Lai; Hang Ting Lue; Ming Jui Yang; Jung Yu Hsieh; Szu Yu Wang; Tai Bor Wu; Guang Li Luo; Chao-Hsin Chien; Erh Kun Lai; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/NVSMW.2007.4290593

MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation

Sheng Chih Lai^*, Hang Ting Lue, Ming Jui Yang, Jung Yu Hsieh, Szu Yu Wang, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

27 Scopus citations

Abstract

A bandgap engineered SONOS (BE-SONOS) [1] using Al₂O₃ top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P⁺-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al ₂O₃ blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

Original language	English
Title of host publication	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW
Pages	88-89
Number of pages	2
DOIs	https://doi.org/10.1109/NVSMW.2007.4290593
State	Published - 1 Dec 2007
Event	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW - Monterey, CA, United States Duration: 26 Aug 2007 → 30 Aug 2007

Publication series

Name	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Conference

Conference	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW
Country/Territory	United States
City	Monterey, CA
Period	26/08/07 → 30/08/07

Access to Document

10.1109/NVSMW.2007.4290593

Cite this

Lai, S. C., Lue, H. T., Yang, M. J., Hsieh, J. Y., Wang, S. Y., Wu, T. B., Luo, G. L., Chien, C-H., Lai, E. K., Hsieh, K. Y., Liu, R., & Lu, C. Y. (2007). MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. In 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW (pp. 88-89). [4290593] (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW). https://doi.org/10.1109/NVSMW.2007.4290593

@inproceedings{d89aa105f7444b7c9da01f8f215c24a4,

title = "MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al 2O3 blocking layer to overcome erase saturation",

abstract = "A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.",

author = "Lai, {Sheng Chih} and Lue, {Hang Ting} and Yang, {Ming Jui} and Hsieh, {Jung Yu} and Wang, {Szu Yu} and Wu, {Tai Bor} and Luo, {Guang Li} and Chao-Hsin Chien and Lai, {Erh Kun} and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/NVSMW.2007.4290593",

language = "English",

isbn = "1424407532",

series = "2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW",

pages = "88--89",

booktitle = "2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW",

note = "null ; Conference date: 26-08-2007 Through 30-08-2007",

}

Lai, SC, Lue, HT, Yang, MJ, Hsieh, JY, Wang, SY, Wu, TB, Luo, GL, Chien, C-H, Lai, EK, Hsieh, KY, Liu, R & Lu, CY 2007, MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW., 4290593, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW, pp. 88-89, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW, Monterey, CA, United States, 26/08/07. https://doi.org/10.1109/NVSMW.2007.4290593

MA BE-SONOS : A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. / Lai, Sheng Chih; Lue, Hang Ting; Yang, Ming Jui et al.

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW. 2007. p. 88-89 4290593 (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MA BE-SONOS

AU - Lai, Sheng Chih

AU - Lue, Hang Ting

AU - Yang, Ming Jui

AU - Hsieh, Jung Yu

AU - Wang, Szu Yu

AU - Wu, Tai Bor

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Lai, Erh Kun

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

AB - A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

UR - http://www.scopus.com/inward/record.url?scp=48649095167&partnerID=8YFLogxK

U2 - 10.1109/NVSMW.2007.4290593

DO - 10.1109/NVSMW.2007.4290593

M3 - Conference contribution

AN - SCOPUS:48649095167

SN - 1424407532

SN - 9781424407538

T3 - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

SP - 88

EP - 89

BT - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Y2 - 26 August 2007 through 30 August 2007

ER -

Lai SC, Lue HT, Yang MJ, Hsieh JY, Wang SY, Wu TB et al. MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. In 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW. 2007. p. 88-89. 4290593. (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW). doi: 10.1109/NVSMW.2007.4290593