Keyphrases
308-nm Excimer Laser
25%
Atomic Ratio
25%
Excimer Laser Irradiation
25%
Film Growth
25%
GaAs(110)
100%
Gallium Arsenide
50%
He II
25%
Indium
100%
InN Films
100%
Laser-assisted
25%
Low Pressure Chemical Vapor Deposition (LPCVD)
100%
Low-pressure Condition
25%
Nitrides
25%
Photon Beam
25%
Pseudopotential Calculations
25%
SEM Images
25%
Si Surface
25%
Si(100) Surface
25%
Si(111)
100%
Valence Band
25%
X-ray Photoelectron
25%
XPS Spectra
25%
XPS-UPS
25%
Chemistry
Excimer
33%
formation
33%
Indium
100%
Low Pressure Chemical Vapor Deposition
100%
Nitride
33%
Photoelectron
33%
Pseudopotential
33%
Scanning Electron Microscopy
66%
Ultra-Violet Photoelectron Spectroscopy
33%
Valence Band
33%
X-Ray Photoelectron Spectrum
33%
Material Science
Film
80%
Film Growth
20%
Gallium Arsenide
100%
Indium
100%
Low Pressure Chemical Vapor Deposition
100%
Nitride Compound
20%
Scanning Electron Microscopy
40%
Surface (Surface Science)
60%
Physics
Excimer Laser
33%
Indium
100%
Nitride
33%
Photoelectron
33%
Photon Beams
33%
Pseudopotential
33%
Scanning Electron Microscopy
66%
Vapor Deposition
100%
X Ray Spectroscopy
66%
Engineering
Chemical Vapor Deposition
100%
Excimer Laser
20%
Film Growth Process
20%
Gallium Arsenide
100%
Laser Irradiation
20%
Nitride
20%
Photoelectron
20%
Pseudopotential Calculation
20%
Si Surface
20%
Valence Band
20%
Vapor Deposition
100%