LPCVD of InN on GaAs(110) using HN3 and TMIn: comparison with Si(100) results

Y. Bu; Ming-Chang Lin

doi:10.1557/PROC-335-21

LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results

Y. Bu^*, Ming-Chang Lin

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN₃ and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In_3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

Original language	English
Title of host publication	Metal-Organic Chemical Vapor Deposition of Electronic Ceramics
Editors	Seshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
Publisher	Publ by Materials Research Society
Pages	21-26
Number of pages	6
ISBN (Print)	1558992340
DOIs	https://doi.org/10.1557/PROC-335-21
State	Published - 1 Jan 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 29 Nov 1993 → 2 Dec 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	335
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	29/11/93 → 2/12/93

Access to Document

10.1557/PROC-335-21

Cite this

Bu, Y., & Lin, M.-C. (1994). LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics (pp. 21-26). (Materials Research Society Symposium Proceedings; Vol. 335). Publ by Materials Research Society. https://doi.org/10.1557/PROC-335-21

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title = "LPCVD of InN on GaAs(110) using HN3 and TMIn: comparison with Si(100) results",

abstract = "Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).",

author = "Y. Bu and Ming-Chang Lin",

year = "1994",

month = jan,

day = "1",

doi = "10.1557/PROC-335-21",

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series = "Materials Research Society Symposium Proceedings",

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pages = "21--26",

editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",

booktitle = "Metal-Organic Chemical Vapor Deposition of Electronic Ceramics",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

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Bu, Y & Lin, M-C 1994, LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Materials Research Society Symposium Proceedings, vol. 335, Publ by Materials Research Society, pp. 21-26, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 29/11/93. https://doi.org/10.1557/PROC-335-21

LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. / Bu, Y.; Lin, Ming-Chang.
Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Publ by Materials Research Society, 1994. p. 21-26 (Materials Research Society Symposium Proceedings; Vol. 335).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Ming-Chang

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

AB - Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

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