Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

D. S. Yu; Albert Chin; B. F. Hung; W. J. Chen; C. X. Zhu; M. F. Li; S. Y. Zhu; D. L. Kwong

doi:10.1109/DRC.2004.1367763

Low workfunction fully suicided gate on SiO₂/Si and LaAlO ₃/GOI n-MOSFETs

D. S. Yu^*, Albert Chin, B. F. Hung, W. J. Chen, C. X. Zhu, M. F. Li, S. Y. Zhu, D. L. Kwong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO₂/Si, novel high-κ LaAlO₃/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	21-22
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367763
State	Published - 1 Dec 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: 21 Jun 2004 → 23 Jun 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	21/06/04 → 23/06/04

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/DRC.2004.1367763

Cite this

@inproceedings{1a0b390d59ba4165b56ed087776202f9,

title = "Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs",

abstract = "A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.",

author = "Yu, {D. S.} and Albert Chin and Hung, {B. F.} and Chen, {W. J.} and Zhu, {C. X.} and Li, {M. F.} and Zhu, {S. Y.} and Kwong, {D. L.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/DRC.2004.1367763",

language = "English",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "21--22",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Yu, DS, Chin, A, Hung, BF, Chen, WJ, Zhu, CX, Li, MF, Zhu, SY & Kwong, DL 2004, Low workfunction fully suicided gate on SiO₂/Si and LaAlO ₃/GOI n-MOSFETs. in Device Research Conference - Conference Digest, 62nd DRC., II.A.-5, Device Research Conference - Conference Digest, DRC, pp. 21-22, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 21/06/04. https://doi.org/10.1109/DRC.2004.1367763

TY - GEN

T1 - Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

AU - Yu, D. S.

AU - Chin, Albert

AU - Hung, B. F.

AU - Chen, W. J.

AU - Zhu, C. X.

AU - Li, M. F.

AU - Zhu, S. Y.

AU - Kwong, D. L.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.

AB - A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=13444261957&partnerID=8YFLogxK

U2 - 10.1109/DRC.2004.1367763

DO - 10.1109/DRC.2004.1367763

M3 - Conference contribution

AN - SCOPUS:13444261957

SN - 0780382846

T3 - Device Research Conference - Conference Digest, DRC

SP - 21

EP - 22

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -