Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

Chih Hung Lu, Tuo-Hung Hou, Tung Ming Pan

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14 Scopus citations

Abstract

In this brief, we developed a low-voltage ( VDS =0.5 V and V GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high- κ HfO2 sensing membrane grown by lowerature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm2/V-s, a small subthreshold swing of 90 mV/decade, and high I scriptscriptstyle ON I scriptscriptstyle OFF ratio of 2.4 × 107. The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7→ 4→ 7→ 10→ 7 and a low drift rate of 2.5 mV/h at pH 7.

Original languageEnglish
Article number7589998
Pages (from-to)5060-5063
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume63
Issue number12
DOIs
StatePublished - 1 Dec 2016

Keywords

  • HfO
  • InGaZnO
  • ion-sensitive thin-film transistor (ISTFT)
  • pH sensitivity

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