Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

Nai Chao Su; Shui Jinn Wang; Chin Chuan Huang; Yu Han Chen; Hao Yuan Huang; Chen Kuo Chiang; Albert Chin

doi:10.1109/LED.2010.2047232

Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

Nai Chao Su^*, Shui Jinn Wang, Chin Chuan Huang, Yu Han Chen, Hao Yuan Huang, Chen Kuo Chiang, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm²V • s, and an acceptable on/off current ratio of 2×10⁵. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

Original language	English
Article number	5460931
Pages (from-to)	680-682
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2047232
State	Published - Jul 2010

Keywords

Flexible thin-film transistors (TFTs)
HfLaO
InGaZnO (IGZO)
high-κ

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LED.2010.2047232

Cite this

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title = "Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing",

abstract = "A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.",

keywords = "Flexible thin-film transistors (TFTs), HfLaO, InGaZnO (IGZO), high-κ",

author = "Su, {Nai Chao} and Wang, {Shui Jinn} and Huang, {Chin Chuan} and Chen, {Yu Han} and Huang, {Hao Yuan} and Chiang, {Chen Kuo} and Albert Chin",

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doi = "10.1109/LED.2010.2047232",

language = "English",

volume = "31",

pages = "680--682",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

AU - Su, Nai Chao

AU - Wang, Shui Jinn

AU - Huang, Chin Chuan

AU - Chen, Yu Han

AU - Huang, Hao Yuan

AU - Chiang, Chen Kuo

AU - Chin, Albert

PY - 2010/7

Y1 - 2010/7

N2 - A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

AB - A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

KW - Flexible thin-film transistors (TFTs)

KW - HfLaO

KW - InGaZnO (IGZO)

KW - high-κ

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U2 - 10.1109/LED.2010.2047232

DO - 10.1109/LED.2010.2047232

M3 - Article

AN - SCOPUS:77954145410

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SP - 680

EP - 682

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

M1 - 5460931

ER -

Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

Abstract

Keywords

UN SDGs

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