Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

C. T. Wan; Y. K. Su; Hsin-Chieh Yu; C. Y. Huang; W. H. Lin; W. C. Chen; H. C. Tseng; J. B. Horng; C. Hu; Seth Tsau

doi:10.1109/LPT.2009.2028654

Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

C. T. Wan^*, Y. K. Su, Hsin-Chieh Yu, C. Y. Huang, W. H. Lin, W. C. Chen, H. C. Tseng, J. B. Horng, C. Hu, Seth Tsau

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this letter, the strained In_0.22Ga_0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (α_i) and the transparency current density (J_tr) were 1.78 cm^-1 and 40.2 A/cm², respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the α_i and J_tr could be reduced to 0.63 cm^-1 and 39.1 A/cm², respectively. To the best of our knowledge, the J_tr was the lowest among the reported InGaAs lasers around 1060 nm.

Original language	English
Pages (from-to)	1474-1476
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2009.2028654
State	Published - 7 Oct 2009

Keywords

InGaAs
Lasers
Metal-organic vapor phase epitaxy (MOVPE)

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10.1109/LPT.2009.2028654

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@article{0af6468ac013441e85a075407c0bcf3f,

title = "Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer",

abstract = "In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.",

keywords = "InGaAs, Lasers, Metal-organic vapor phase epitaxy (MOVPE)",

author = "Wan, {C. T.} and Su, {Y. K.} and Hsin-Chieh Yu and Huang, {C. Y.} and Lin, {W. H.} and Chen, {W. C.} and Tseng, {H. C.} and Horng, {J. B.} and C. Hu and Seth Tsau",

year = "2009",

month = oct,

day = "7",

doi = "10.1109/LPT.2009.2028654",

language = "English",

volume = "21",

pages = "1474--1476",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

}

TY - JOUR

T1 - Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

AU - Wan, C. T.

AU - Su, Y. K.

AU - Yu, Hsin-Chieh

AU - Huang, C. Y.

AU - Lin, W. H.

AU - Chen, W. C.

AU - Tseng, H. C.

AU - Horng, J. B.

AU - Hu, C.

AU - Tsau, Seth

PY - 2009/10/7

Y1 - 2009/10/7

N2 - In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.

AB - In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.

KW - InGaAs

KW - Lasers

KW - Metal-organic vapor phase epitaxy (MOVPE)

UR - http://www.scopus.com/inward/record.url?scp=70349600854&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2028654

DO - 10.1109/LPT.2009.2028654

M3 - Article

AN - SCOPUS:70349600854

SN - 1041-1135

VL - 21

SP - 1474

EP - 1476

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

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