The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.
- 'W'-type quantum wells
- InAlGaAs separate confined layer
- short-wavelength infrared