Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen; Wei Chou Hsu; Hao-Chung Kuo; Hsin-Chieh Yu; Chia Pin Sung; Chen Ming Lu; Chih Hung Chiou; Jin Mei Wang; Yu Hsiang Chang; Tsin Dong Lee; Jyh Shyang Wang

doi:10.1143/JJAP.44.7485

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen, Wei Chou Hsu^*, Hao-Chung Kuo, Hsin-Chieh Yu, Chia Pin Sung, Chen Ming Lu, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Tsin Dong Lee, Jyh Shyang Wang

^*Corresponding author for this work

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6 Scopus citations

Abstract

A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm² for a 2-mm-cavity device and a transparency current density of 66 A/cm² were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm^-1, respectively.

Original language	English
Pages (from-to)	7485-7487
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7485
State	Published - 11 Oct 2005

Keywords

InGaAs
MOCVD
Transparency current density

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Chen, I. L., Hsu, W. C., Kuo, H.-C., Yu, H.-C., Sung, C. P., Lu, C. M., Chiou, C. H., Wang, J. M., Chang, Y. H., Lee, T. D., & Wang, J. S. (2005). Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(10), 7485-7487. https://doi.org/10.1143/JJAP.44.7485

@article{eb5660c68c984301987895f6a09ce8da,

title = "Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition",

abstract = "A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.",

keywords = "InGaAs, MOCVD, Transparency current density",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Hao-Chung Kuo and Hsin-Chieh Yu and Sung, {Chia Pin} and Lu, {Chen Ming} and Chiou, {Chih Hung} and Wang, {Jin Mei} and Chang, {Yu Hsiang} and Lee, {Tsin Dong} and Wang, {Jyh Shyang}",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7485",

language = "English",

volume = "44",

pages = "7485--7487",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

Chen, IL, Hsu, WC, Kuo, H-C , Yu, H-C, Sung, CP, Lu, CM, Chiou, CH, Wang, JM, Chang, YH, Lee, TD & Wang, JS 2005, 'Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 44, no. 10, pp. 7485-7487. https://doi.org/10.1143/JJAP.44.7485

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition. / Chen, I. Liang; Hsu, Wei Chou; Kuo, Hao-Chung et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7485-7487.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Kuo, Hao-Chung

AU - Yu, Hsin-Chieh

AU - Sung, Chia Pin

AU - Lu, Chen Ming

AU - Chiou, Chih Hung

AU - Wang, Jin Mei

AU - Chang, Yu Hsiang

AU - Lee, Tsin Dong

AU - Wang, Jyh Shyang

PY - 2005/10/11

Y1 - 2005/10/11

N2 - A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

AB - A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

KW - InGaAs

KW - MOCVD

KW - Transparency current density

UR - http://www.scopus.com/inward/record.url?scp=31444457172&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.7485

DO - 10.1143/JJAP.44.7485

M3 - Article

AN - SCOPUS:31444457172

SN - 0021-4922

VL - 44

SP - 7485

EP - 7487

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

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