Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Kuo-Jui Lin*, Pei Yin Su, Hsu Chieh Cheng

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Scopus citations

    Abstract

    Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm2 and no noticeable threshold jump is observed. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended to 150 nm, from 1143 to 1293 nm. The effect of cavity length on the tuning characteristics is discussed and the strategy for design and optimization of multilayer quantum-dot structure is also proposed.

    Original languageEnglish
    Pages (from-to)3941-3947
    Number of pages7
    JournalOptics Express
    Volume20
    Issue number4
    DOIs
    StatePublished - 13 Feb 2012

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