Low thermal budget antimony/phosphorus NMOS technology for CMOS

D. L. Harame, E. Ganin, J. H. Comfort, J. Y.C. Sun, A. Acovic, S. A. Cohen, P. A. Ronsheim, S. Verdonckt-Vandebroek, P. J. Restle, S. Ratanaphanyarat, M. J. Saccamango, J. B. Johnson, S. A. Furkay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A novel antimony-preamorphized phosphorus process (Sb/P) for NMOS source/drain formation is presented. It is demonstrated that very shallow (<or=0.15 mu m) phosphorus junctions with ideal diode characteristics and very low leakage current can be realized by using Sb pre-amorphization and RTA. The authors also fabricated 0.25 mu m effective channel length NMOS transistors with these shallow Sb/P diffusions and 7 nm gate oxide and obtained excellent device characteristics, e.g., Gm/sub (sat)/=236 mS/mm, S=79 mV/dec, and total source/drain series resistance of 420 Omega - mu m. These devices have short-channel effects, punch-through voltage, and channel hot carrier reliability comparable to those with conventional (furnace drive-in) arsenic diffusions. The more graded lateral profile of these Sb/P junctions also reduces the gate induced drain leakage by 10X compared with As devices. This low thermal-budget Sb/P process is therefore scalable and extendible to deep submicron bulk and 3-D CMOS ULSI.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages645-648
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States
CityWashington
Period8/12/9111/12/91

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