Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing

Po Yi Kuo; Chien Min Chang; Po-Tsun Liu

doi:10.1109/VLSIT.2018.8510684

Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing

Po Yi Kuo, Chien Min Chang, Po-Tsun Liu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ∼ 63mV/dec., high field-effect mobility (μ _FE ) ∼ 25.3 cm ² /V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.

Original language	English
Title of host publication	2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	21-22
Number of pages	2
ISBN (Electronic)	9781538642160
DOIs	https://doi.org/10.1109/VLSIT.2018.8510684
State	Published - Jun 2018
Event	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States Duration: 18 Jun 2018 → 22 Jun 2018

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2018-June
ISSN (Print)	0743-1562

Conference

Conference	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
Country/Territory	United States
City	Honolulu
Period	18/06/18 → 22/06/18

Access to Document

10.1109/VLSIT.2018.8510684

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Kuo, P. Y., Chang, C. M., & Liu, P.-T. (2018). Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018 (pp. 21-22). Article 8510684 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2018.8510684

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title = "Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing",

abstract = " Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ∼ 63mV/dec., high field-effect mobility (μ FE ) ∼ 25.3 cm 2 /V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future. ",

author = "Kuo, {Po Yi} and Chang, {Chien Min} and Po-Tsun Liu",

year = "2018",

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doi = "10.1109/VLSIT.2018.8510684",

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note = "38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 ; Conference date: 18-06-2018 Through 22-06-2018",

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Kuo, PY, Chang, CM & Liu, P-T 2018, Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018., 8510684, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 21-22, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, United States, 18/06/18. https://doi.org/10.1109/VLSIT.2018.8510684

Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing. / Kuo, Po Yi; Chang, Chien Min; Liu, Po-Tsun.
2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 21-22 8510684 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ∼ 63mV/dec., high field-effect mobility (μ FE ) ∼ 25.3 cm 2 /V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.

AB - Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ∼ 63mV/dec., high field-effect mobility (μ FE ) ∼ 25.3 cm 2 /V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.

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Kuo PY, Chang CM, Liu PT. Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 21-22. 8510684. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2018.8510684

Low thermal budget amorphous indium tungsten oxide nano-sheet junctionless transistors with near ideal subthreshold swing

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