Low-temperature redistribution of As in Si during Pd2Si formation

I. Ohdomari*, King-Ning Tu, K. Suguro, M. Akiyama, I. Kimura, K. Yoneda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

Original languageEnglish
Pages (from-to)1015-1017
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number12
DOIs
StatePublished - 1 Dec 1981

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