Low-temperature redistribution of As in Si during Pd2Si formation

I. Ohdomari*, King-Ning Tu, K. Suguro, M. Akiyama, I. Kimura, K. Yoneda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations


We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

Original languageEnglish
Pages (from-to)1015-1017
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1 Dec 1981


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