Low-temperature redistribution of As in Si during Pd2Si formation

I. Ohdomari; King-Ning Tu; K. Suguro; M. Akiyama; I. Kimura; K. Yoneda

doi:10.1063/1.92250

Low-temperature redistribution of As in Si during Pd₂Si formation

I. Ohdomari^*, King-Ning Tu, K. Suguro, M. Akiyama, I. Kimura, K. Yoneda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

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Abstract

We have investigated the change in depth compositional profiles of implanted As in Si due to Pd₂Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×10²¹/cm³) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd₂Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

Original language	English
Pages (from-to)	1015-1017
Number of pages	3
Journal	Applied Physics Letters
Volume	38
Issue number	12
DOIs	https://doi.org/10.1063/1.92250
State	Published - 1 Dec 1981

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title = "Low-temperature redistribution of As in Si during Pd2Si formation",

abstract = "We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.",

author = "I. Ohdomari and King-Ning Tu and K. Suguro and M. Akiyama and I. Kimura and K. Yoneda",

year = "1981",

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T1 - Low-temperature redistribution of As in Si during Pd2Si formation

AU - Ohdomari, I.

AU - Tu, King-Ning

AU - Suguro, K.

AU - Akiyama, M.

AU - Kimura, I.

AU - Yoneda, K.

PY - 1981/12/1

Y1 - 1981/12/1

N2 - We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

AB - We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

UR - http://www.scopus.com/inward/record.url?scp=0002898171&partnerID=8YFLogxK

U2 - 10.1063/1.92250

DO - 10.1063/1.92250

M3 - Article

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VL - 38

SP - 1015

EP - 1017

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Low-temperature redistribution of As in Si during Pd₂Si formation

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