Low-temperature reaction of thin-film platinum (≤300 Å) with (100) silicon

Keyphrases

• (100) Silicon 100%
• Low Temperature Reaction 100%
• Resistance Increase 100%
• Annealing 66%
• Sheet Resistance 66%
• Diffraction 66%
• PtSi 66%
• Pt Film 66%
• Auger Electron Spectroscopy 33%
• Film Thickness 33%
• Activation Energy 33%
• Grain Size 33%
• Spectroscopic Analysis 33%
• X-ray Diffraction (XRD) Analysis 33%
• Lattice Matching 33%
• Silicide Formation 33%
• Resistance Measurement 33%
• Four-stage 33%
• Si Structures 33%
• Platinum Film 33%
• Phase Formation 33%
• Ellipsometry Measurement 33%
• Phase Growth 33%
• Transmission Electron Diffraction 33%
• Minimum Value 33%
• Film Thickness Distribution 33%
• Growth Effect 33%
• Direct Reactions 33%
• Electron Diffraction Analysis 33%
• Effective Absorption Coefficient 33%
• Partial Lattice 33%
• Stable Value 33%
• Second Maximum 33%
• Formation Sequence 33%

Engineering

• Thin Films 100%
• Ray Diffraction 100%
• Low-Temperature 100%
• Sheet Resistance 100%
• Initial Phase 100%
• Activation Energy 50%
• X-Ray Diffraction Analysis 50%
• Phase Formation 50%
• Growth Phase 50%
• Final Stage 50%
• Electron Diffraction 50%
• Absorptivity 50%
• Absorption Coefficient 50%

Material Science

• Thin Films 100%
• Film 100%
• Film Thickness 100%
• Silicon 100%
• Platinum 100%
• Activation Energy 50%
• Grain Size 50%
• Silicide 50%
• Electron Diffraction 50%
• X Ray Diffraction Analysis 50%
• Thick Films 50%