Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

Cheng Wei Shih*, Te Jui Yen, Albert Chin, Chun Fu Lu, Wei Fang Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.

Original languageEnglish
Article number8700493
Pages (from-to)909-912
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jun 2019


  • SnO
  • Tin oxide
  • UV irradiation
  • transistor


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