Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

Cheng Wei Shih; Te Jui Yen; Albert Chin; Chun Fu Lu; Wei Fang Su

doi:10.1109/LED.2019.2912032

Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

Cheng Wei Shih^*, Te Jui Yen, Albert Chin, Chun Fu Lu, Wei Fang Su

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm²/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO₂ TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn⁴⁺ and reduced the presence of unwanted Sn²⁺, even at low processing temperatures, improving the quality of SnO₂.

Original language	English
Article number	8700493
Pages (from-to)	909-912
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	6
DOIs	https://doi.org/10.1109/LED.2019.2912032
State	Published - 1 Jun 2019

Keywords

SnO
Tin oxide
UV irradiation
transistor

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10.1109/LED.2019.2912032

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title = "Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation",

abstract = "Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.",

keywords = "SnO, Tin oxide, UV irradiation, transistor",

author = "Shih, {Cheng Wei} and Yen, {Te Jui} and Albert Chin and Lu, {Chun Fu} and Su, {Wei Fang}",

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doi = "10.1109/LED.2019.2912032",

language = "English",

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T1 - Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

AU - Shih, Cheng Wei

AU - Yen, Te Jui

AU - Chin, Albert

AU - Lu, Chun Fu

AU - Su, Wei Fang

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.

AB - Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.

KW - SnO

KW - Tin oxide

KW - UV irradiation

KW - transistor

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U2 - 10.1109/LED.2019.2912032

DO - 10.1109/LED.2019.2912032

M3 - Article

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VL - 40

SP - 909

EP - 912

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 8700493

ER -

Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

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Keywords

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