Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

Yi Hsuan Chen; Li Chen Yen; Tien Shun Chang; Tsung Yu Chiang; Po Yi Kuo; Tien-Sheng Chao

doi:10.1109/LED.2013.2266331

Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

Yi Hsuan Chen, Li Chen Yen, Tien Shun Chang, Tsung Yu Chiang, Po Yi Kuo, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV _decade, than the other T-TFTs and a high ON/OFF ratio >10 ⁶ at V_DS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

Original language	English
Article number	6544264
Pages (from-to)	1017-1019
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2266331
State	Published - 7 Aug 2013

Keywords

Metal-induced lateral crystallization (MILC)
poly-Si thin-film transistor (poly-Si TFTs)
tunneling field-effect-transistor (TFET)

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10.1109/LED.2013.2266331

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title = "Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC",

abstract = "It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV decade, than the other T-TFTs and a high ON/OFF ratio >10 6 at VDS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.",

keywords = "Metal-induced lateral crystallization (MILC), poly-Si thin-film transistor (poly-Si TFTs), tunneling field-effect-transistor (TFET)",

author = "Chen, {Yi Hsuan} and Yen, {Li Chen} and Chang, {Tien Shun} and Chiang, {Tsung Yu} and Kuo, {Po Yi} and Tien-Sheng Chao",

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doi = "10.1109/LED.2013.2266331",

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AU - Chen, Yi Hsuan

AU - Yen, Li Chen

AU - Chang, Tien Shun

AU - Chiang, Tsung Yu

AU - Kuo, Po Yi

AU - Chao, Tien-Sheng

PY - 2013/8/7

Y1 - 2013/8/7

N2 - It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV decade, than the other T-TFTs and a high ON/OFF ratio >10 6 at VDS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

AB - It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV decade, than the other T-TFTs and a high ON/OFF ratio >10 6 at VDS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

KW - Metal-induced lateral crystallization (MILC)

KW - poly-Si thin-film transistor (poly-Si TFTs)

KW - tunneling field-effect-transistor (TFET)

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DO - 10.1109/LED.2013.2266331

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 6544264

ER -

Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

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Keywords

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