Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

Yu Hsien Lin; Chao-Hsin Chien; Tung Huan Chou; Tien-Sheng Chao; Tan Fu Lei

doi:10.1109/TED.2006.890379

Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

Yu Hsien Lin^*, Chao-Hsin Chien, Tung Huan Chou, Tien-Sheng Chao, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing ≤600°C. It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/ 10 ms), long retention time (>10⁶ s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory.

Original language	English
Pages (from-to)	531-536
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	3
DOIs	https://doi.org/10.1109/TED.2006.890379
State	Published - Mar 2007

Keywords

Flash memory
Hafnium silicate
Nonvolatile memories
Polycrystalline silicon thin-film transistor (poly-Si-TFT)

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10.1109/TED.2006.890379

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@article{b987870eec814b66a1f6550c538575bf,

title = "Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate",

abstract = "In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing ≤600°C. It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/ 10 ms), long retention time (>106 s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory.",

keywords = "Flash memory, Hafnium silicate, Nonvolatile memories, Polycrystalline silicon thin-film transistor (poly-Si-TFT)",

author = "Lin, {Yu Hsien} and Chao-Hsin Chien and Chou, {Tung Huan} and Tien-Sheng Chao and Lei, {Tan Fu}",

year = "2007",

month = mar,

doi = "10.1109/TED.2006.890379",

language = "English",

volume = "54",

pages = "531--536",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

AU - Lin, Yu Hsien

AU - Chien, Chao-Hsin

AU - Chou, Tung Huan

AU - Chao, Tien-Sheng

AU - Lei, Tan Fu

PY - 2007/3

Y1 - 2007/3

N2 - In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing ≤600°C. It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/ 10 ms), long retention time (>106 s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory.

AB - In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing ≤600°C. It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/ 10 ms), long retention time (>106 s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory.

KW - Flash memory

KW - Hafnium silicate

KW - Nonvolatile memories

KW - Polycrystalline silicon thin-film transistor (poly-Si-TFT)

UR - http://www.scopus.com/inward/record.url?scp=33947706731&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.890379

DO - 10.1109/TED.2006.890379

M3 - Article

AN - SCOPUS:33947706731

SN - 0018-9383

VL - 54

SP - 531

EP - 536

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

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Keywords

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