Low temperature MOCVD of oriented PbTiO3 films on Si(100)

H. D. Chen; B. M. Yen; G. R. Bai; D. Liu; H. L.M. Chang

doi:10.1557/PROC-335-35

Low temperature MOCVD of oriented PbTiO₃ films on Si(100)

H. D. Chen^*, B. M. Yen, G. R. Bai, D. Liu, H. L.M. Chang

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Highly oriented PbTiO₃ (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(C₃H₇O)₄, tetraethyl lead, Pb(C₂H₅)₄, and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature.

Original language	English
Title of host publication	Metal-Organic Chemical Vapor Deposition of Electronic Ceramics
Editors	Seshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
Publisher	Publ by Materials Research Society
Pages	35-40
Number of pages	6
ISBN (Print)	1558992340
DOIs	https://doi.org/10.1557/PROC-335-35
State	Published - 1 Jan 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 29 Nov 1993 → 2 Dec 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	335
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	29/11/93 → 2/12/93

Access to Document

10.1557/PROC-335-35

Cite this

Chen, H. D., Yen, B. M., Bai, G. R., Liu, D., & Chang, H. L. M. (1994). Low temperature MOCVD of oriented PbTiO₃ films on Si(100). In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics (pp. 35-40). (Materials Research Society Symposium Proceedings; Vol. 335). Publ by Materials Research Society. https://doi.org/10.1557/PROC-335-35

@inproceedings{83babea42ace4bc1a5044f7af3234008,

title = "Low temperature MOCVD of oriented PbTiO3 films on Si(100)",

abstract = "Highly oriented PbTiO3 (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(C3H7O)4, tetraethyl lead, Pb(C2H5)4, and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature.",

author = "Chen, {H. D.} and Yen, {B. M.} and Bai, {G. R.} and D. Liu and Chang, {H. L.M.}",

year = "1994",

month = jan,

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doi = "10.1557/PROC-335-35",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

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pages = "35--40",

editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",

booktitle = "Metal-Organic Chemical Vapor Deposition of Electronic Ceramics",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

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Chen, HD, Yen, BM, Bai, GR, Liu, D & Chang, HLM 1994, Low temperature MOCVD of oriented PbTiO₃ films on Si(100). in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Materials Research Society Symposium Proceedings, vol. 335, Publ by Materials Research Society, pp. 35-40, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 29/11/93. https://doi.org/10.1557/PROC-335-35

Low temperature MOCVD of oriented PbTiO₃ films on Si(100). / Chen, H. D.; Yen, B. M.; Bai, G. R. et al.
Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Publ by Materials Research Society, 1994. p. 35-40 (Materials Research Society Symposium Proceedings; Vol. 335).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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