Low temperature MOCVD of oriented PbTiO3 films on Si(100)

H. D. Chen*, B. M. Yen, G. R. Bai, D. Liu, H. L.M. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Highly oriented PbTiO3 (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(C3H7O)4, tetraethyl lead, Pb(C2H5)4, and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature.

Original languageEnglish
Title of host publicationMetal-Organic Chemical Vapor Deposition of Electronic Ceramics
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages35-40
Number of pages6
ISBN (Print)1558992340
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume335
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29/11/932/12/93

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