Low-temperature microwave annealing processes for future IC fabrication

Yao Jen Lee; Bo An Tsai; Ta Chun Cho; Fu Kuo Hsueh; Po Jung Sung; Chiung Hui Lai; Chih-Wei Luo; Tien-Sheng Chao

doi:10.1109/INEC.2014.7460453

Low-temperature microwave annealing processes for future IC fabrication

Yao Jen Lee, Bo An Tsai, Ta Chun Cho, Fu Kuo Hsueh, Po Jung Sung, Chiung Hui Lai, Chih-Wei Luo, Tien-Sheng Chao

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460453
State	Published - 26 Apr 2016
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 28 Jul 2014 → 31 Jul 2014

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	28/07/14 → 31/07/14

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10.1109/INEC.2014.7460453

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Lee, Y. J., Tsai, B. A., Cho, T. C., Hsueh, F. K., Sung, P. J., Lai, C. H., Luo, C.-W., & Chao, T.-S. (2016). Low-temperature microwave annealing processes for future IC fabrication. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460453 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460453

@inproceedings{732ee34b1cf7455f91325165d77f90d0,

title = "Low-temperature microwave annealing processes for future IC fabrication",

abstract = "Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.",

author = "Lee, {Yao Jen} and Tsai, {Bo An} and Cho, {Ta Chun} and Hsueh, {Fu Kuo} and Sung, {Po Jung} and Lai, {Chiung Hui} and Chih-Wei Luo and Tien-Sheng Chao",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460453",

language = "English",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

address = "美國",

}

Lee, YJ, Tsai, BA, Cho, TC, Hsueh, FK, Sung, PJ, Lai, CH, Luo, C-W & Chao, T-S 2016, Low-temperature microwave annealing processes for future IC fabrication. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460453, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 28/07/14. https://doi.org/10.1109/INEC.2014.7460453

Low-temperature microwave annealing processes for future IC fabrication. / Lee, Yao Jen; Tsai, Bo An; Cho, Ta Chun et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460453 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low-temperature microwave annealing processes for future IC fabrication

AU - Lee, Yao Jen

AU - Tsai, Bo An

AU - Cho, Ta Chun

AU - Hsueh, Fu Kuo

AU - Sung, Po Jung

AU - Lai, Chiung Hui

AU - Luo, Chih-Wei

AU - Chao, Tien-Sheng

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.

AB - Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.

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M3 - Conference contribution

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T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Low-temperature microwave annealing processes for future IC fabrication

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