@inproceedings{7f68e487c8a64236b27ff6bb69d4830d,
title = "Low temperature (<180°C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration",
abstract = "Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170°C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu2In phase. For another case, Cu-Cu bonding with Ti passivation was successfully achieved at 180°C Application of Ti passivation can protect inner Cu from oxidation; therefore, the required bonding temperature can be decreased. Compared to direct Cu-Cu bonding, Cu/In bonding and Cu-Cu bonding with Ti passivation can be performed at low temperature, which can meet low thermal budget requirement for most devices. Besides, with the good electrical performance and reliability, these two bonded interconnects can be applied for 3D IC interconnects.",
author = "Chien, {Yu San} and Huang, {Yan Pin} and Tzeng, {Ruoh Ning} and Shy, {Ming Shaw} and Lin, {Teu Hua} and Chen, {Kou Hua} and Chuang, {Ching Te} and Wei Hwang and Jin-Chern Chiou and Chiu, {Chi Tsung} and Tong, {Ho Ming} and Kuan-Neng Chen",
year = "2013",
month = sep,
day = "9",
doi = "10.1109/ECTC.2013.6575718",
language = "English",
isbn = "9781479902330",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "IEEE",
pages = "1146--1152",
booktitle = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013",
note = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 ; Conference date: 28-05-2013 Through 31-05-2013",
}