Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Yi Li Cheng; Fon Shan Huang

doi:10.1063/1.2957655

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Chih Tsung Tsai^*, Ting Chang Chang, Po-Tsun Liu, Yi Li Cheng, Fon Shan Huang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

Original language	English
Article number	052903
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.2957655
State	Published - 2008

Access to Document

10.1063/1.2957655

Cite this

@article{ef5b56cc99044abcb3ac9f3875bcd829,

title = "Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications",

abstract = "In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.",

author = "Tsai, {Chih Tsung} and Chang, {Ting Chang} and Po-Tsun Liu and Cheng, {Yi Li} and Huang, {Fon Shan}",

year = "2008",

doi = "10.1063/1.2957655",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

AU - Tsai, Chih Tsung

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Cheng, Yi Li

AU - Huang, Fon Shan

PY - 2008

Y1 - 2008

N2 - In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

AB - In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

UR - http://www.scopus.com/inward/record.url?scp=51849111427&partnerID=8YFLogxK

U2 - 10.1063/1.2957655

DO - 10.1063/1.2957655

M3 - Article

AN - SCOPUS:51849111427

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052903

ER -

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Abstract

Access to Document

Other files and links

Fingerprint

Cite this