Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

Keyphrases

• Amorphous Silicon 16%
• As-deposited 16%
• Auger Electron Spectroscopy 16%
• Boron 16%
• Boron Atom 16%
• Boron Concentration 16%
• Boron Layer 100%
• Cm(III) 16%
• Depositional System 16%
• Diffusivity 16%
• Electron Diffraction Pattern 16%
• Growth Temperature 16%
• High Vacuum Chemical Vapor Deposition 100%
• Low Temperature Growth 100%
• Polysilicon 16%
• Recrystallized 16%
• Secondary Ion Mass Spectrometry 16%
• SiB6 33%
• Silane 16%
• Silicon Hexaboride 16%
• Thermal Annealing 33%
• Transmission Electron Diffraction 16%

Engineering

• Boron Concentration 50%
• Chemical Vapor Deposition 100%
• Deposition System 50%
• Diffusivity 50%
• Electron Diffraction 50%
• Growth Temperature 50%
• Low Growth Temperature 100%
• Polysilicon 50%
• Vapor Deposition 100%

Material Science

• Amorphous Silicon 11%
• Annealing 22%
• Auger Electron Spectroscopy 11%
• Boron 100%
• Chemical Vapor Deposition 100%
• Diffraction Pattern 11%
• Diffusivity 11%
• Electron Diffraction 11%
• Secondary Ion Mass Spectrometry 11%
• Silicon 100%