Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

T. P. Chen; T. F. Lei; Horng-Chih Lin; C. Y. Chang; W. Y. Hsieh; L. J. Chen

doi:10.1063/1.111777

Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

T. P. Chen^*, T. F. Lei, Horng-Chih Lin, C. Y. Chang, W. Y. Hsieh, L. J. Chen

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

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Abstract

A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH₄ and B₂H ₆ (1% in H₂). The growth temperature was as low as 550°C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×10 ²² cm^-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB₆) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB₆ in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.

Original language	English
Pages (from-to)	1853-1855
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	14
DOIs	https://doi.org/10.1063/1.111777
State	Published - 1994

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title = "Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition",

abstract = "A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H 6 (1\% in H2). The growth temperature was as low as 550°C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×10 22 cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.",

author = "Chen, \{T. P.\} and Lei, \{T. F.\} and Horng-Chih Lin and Chang, \{C. Y.\} and Hsieh, \{W. Y.\} and Chen, \{L. J.\}",

year = "1994",

doi = "10.1063/1.111777",

language = "English",

volume = "64",

pages = "1853--1855",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

AU - Chen, T. P.

AU - Lei, T. F.

AU - Lin, Horng-Chih

AU - Chang, C. Y.

AU - Hsieh, W. Y.

AU - Chen, L. J.

PY - 1994

Y1 - 1994

N2 - A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H 6 (1% in H2). The growth temperature was as low as 550°C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×10 22 cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.

AB - A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H 6 (1% in H2). The growth temperature was as low as 550°C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×10 22 cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.

UR - https://www.scopus.com/pages/publications/0343952950

U2 - 10.1063/1.111777

DO - 10.1063/1.111777

M3 - Article

AN - SCOPUS:0343952950

SN - 0003-6951

VL - 64

SP - 1853

EP - 1855

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

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