Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Tz Guei Jung; Chun Yen Chang; Ting Chang Chang; Horng-Chih Lin; Tom Wang; Wen Chung Tsai; Guo Wei Huang

doi:10.1143/JJAP.33.240

Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Tz Guei Jung, Chun Yen Chang, Ting Chang Chang, Horng-Chih Lin, Tom Wang, Wen Chung Tsai, Guo Wei Huang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

Original language	English
Pages (from-to)	240
Number of pages	1
Journal	Japanese journal of applied physics
Volume	33
Issue number	1R
DOIs	https://doi.org/10.1143/JJAP.33.240
State	Published - Jan 1994

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title = "Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition",

abstract = "Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.",

author = "Jung, {Tz Guei} and Chang, {Chun Yen} and Chang, {Ting Chang} and Horng-Chih Lin and Tom Wang and Tsai, {Wen Chung} and Huang, {Guo Wei}",

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AU - Jung, Tz Guei

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AU - Chang, Ting Chang

AU - Lin, Horng-Chih

AU - Wang, Tom

AU - Tsai, Wen Chung

AU - Huang, Guo Wei

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N2 - Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

AB - Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

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Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

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