Abstract
Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.
Original language | English |
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Pages (from-to) | 240 |
Number of pages | 1 |
Journal | Japanese journal of applied physics |
Volume | 33 |
Issue number | 1R |
DOIs | |
State | Published - Jan 1994 |