Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 sccm, respectively.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Dec 1997|
|Event||Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA|
Duration: 1 Apr 1997 → 4 Apr 1997