@inproceedings{0a39ffbc15144d9c99fc3e235cfc2936,
title = "Low temperature Cu/SiO2hybrid bonding fabricated by 2-step process",
abstract = "In this investigation, die-to-die Cu/SiO2 hybrid bonding can be well bonded and obtain excellent bonding strength with Ar plasma pretreatment. The diameter of the microbumps is 8 µm along with 20 µm pitch. Results show that Cu joints can be well bonded under 150 °C ~ 200 °C for 1h in vacuum ambient after water fusion bonding followed by postbonding annealing at 175 °C~200 °C without any external pressure. Cross-sectional electron analysis shows no oxide bonding interface along 150 µm long and no gaps or cracks observed in Cu bonding. Bonding strength was measured by pull tests.",
keywords = "Cu/SiOhybrid bonding, flip chip bonding3-D ICs packaging technology, highly-(111) oriented nanotwinned Cu",
author = "Ong, {Jia Juen} and Chiu, {Wei Lan} and Lee, {Ou Hsiang} and Chang, {Hsiang Hung} and Chih Chen",
note = "Publisher Copyright: {\textcopyright} 2022 Japan Institute of Electronics Packaging.; 21st International Conference on Electronics Packaging, ICEP 2022 ; Conference date: 11-05-2022 Through 14-05-2022",
year = "2022",
doi = "10.23919/ICEP55381.2022.9795579",
language = "English",
series = "2022 International Conference on Electronics Packaging, ICEP 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "135--136",
booktitle = "2022 International Conference on Electronics Packaging, ICEP 2022",
address = "United States",
}