@inproceedings{00b9179f69ba454d9d9db02091c813a4,
title = "Low Temperature Cu/SiO2 Hybrid Bonding Using Area-Selective Metal Passivation (Interface Metal) Technology for 3D IC and Advanced Packaging",
abstract = "This study explores important chip-level bonding structures for heterogeneous integration in microelectronics, focusing on Cu-Cu and Cu/SiO2 hybrid bonding. Structure I investigates Cu-Cu bonding, while structure II demonstrates Cu/SiO2 hybrid bonding with area-selective metal passivation. The research highlights the significance of anti-oxidationġ successful bonding. Both structures use electroless plating for Ag deposition on Cu, offering advantages over traditional physical vapor deposition (PVD). Successful low-temperature bonding (decreased from 250 to 180 °C) is confirmed by SAT and SEM analyses, showing excellent bonding quality with no interface gaps. Electrical measurements on structure II reveal specific contact resistances around 2.5 x 10-7 Ω-cm2, demonstrating the effectiveness of this method in microelectronic device fabrication and integration.",
keywords = "3D integration, Chiplet, Cu bonding, Passivation structure",
author = "Hsu, {Mu Ping} and Tsai, {Wen Tsu} and Lee, {Ou Hsiang} and Chen, {Chi Yu} and Kuo, {Tzu Ying} and Chang, {Hsiang Hung} and Chang, {Hsin Chi} and Hong, {Zhong Jie} and Chen, {Kuan Neng}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 74th IEEE Electronic Components and Technology Conference, ECTC 2024 ; Conference date: 28-05-2024 Through 31-05-2024",
year = "2024",
doi = "10.1109/ECTC51529.2024.00363",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2131--2135",
booktitle = "Proceedings - IEEE 74th Electronic Components and Technology Conference, ECTC 2024",
address = "美國",
}