Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation

Demin Liu, Po Chi Chen, Chien Kang Hsiung, Shin Yi Huang, Yan Pin Huang, Steven Verhaverbeke, Glen Mori, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and 10-8 Omega-cm2 specific contact resistance), mechanical strength(> 15Kgf) and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.

Original languageEnglish
Title of host publication2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728164601
DOIs
StatePublished - Jun 2020
Event2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States
Duration: 16 Jun 202019 Jun 2020

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2020-June
ISSN (Print)0743-1562

Conference

Conference2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
Country/TerritoryUnited States
CityHonolulu
Period16/06/2019/06/20

Keywords

  • Cu hybrid bonding
  • low temperature
  • passivation

Fingerprint

Dive into the research topics of 'Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation'. Together they form a unique fingerprint.

Cite this