Low Temperature Cu to Cu Direct Bonding below 150 °c with Au Passivation Layer

Demin Liu, Po Chih Chen, Yi Chieh Tsai, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

In this research, Au is proposed as a new passivation material for Cu-Cu direct bonding. According to the TEM result, Cu could diffuse through the Au passivation layer to the bonding interface during the thermocompression bonding (TCB) process. In addition, the Au passivation layer can lower the bonding temperature (150 °C) and improve electrical properties, comparing to the conventional Cu-Cu bonding. Furthermore, the electrical measurement results after reliability tests show that the Au passivation method is a reliable way to reduce the bonding temperature of Cu-Cu direct bonding.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
StatePublished - Oct 2019
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 8 Oct 201910 Oct 2019

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Country/TerritoryJapan
CitySendai
Period8/10/1910/10/19

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