TY - GEN
T1 - Low Temperature Cu to Cu Direct Bonding below 150 °c with Au Passivation Layer
AU - Liu, Demin
AU - Chen, Po Chih
AU - Tsai, Yi Chieh
AU - Chen, Kuan Neng
PY - 2019/10
Y1 - 2019/10
N2 - In this research, Au is proposed as a new passivation material for Cu-Cu direct bonding. According to the TEM result, Cu could diffuse through the Au passivation layer to the bonding interface during the thermocompression bonding (TCB) process. In addition, the Au passivation layer can lower the bonding temperature (150 °C) and improve electrical properties, comparing to the conventional Cu-Cu bonding. Furthermore, the electrical measurement results after reliability tests show that the Au passivation method is a reliable way to reduce the bonding temperature of Cu-Cu direct bonding.
AB - In this research, Au is proposed as a new passivation material for Cu-Cu direct bonding. According to the TEM result, Cu could diffuse through the Au passivation layer to the bonding interface during the thermocompression bonding (TCB) process. In addition, the Au passivation layer can lower the bonding temperature (150 °C) and improve electrical properties, comparing to the conventional Cu-Cu bonding. Furthermore, the electrical measurement results after reliability tests show that the Au passivation method is a reliable way to reduce the bonding temperature of Cu-Cu direct bonding.
UR - http://www.scopus.com/inward/record.url?scp=85084111386&partnerID=8YFLogxK
U2 - 10.1109/3DIC48104.2019.9058873
DO - 10.1109/3DIC48104.2019.9058873
M3 - Conference contribution
AN - SCOPUS:85084111386
T3 - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
BT - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Y2 - 8 October 2019 through 10 October 2019
ER -