Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration

Yu Tao Yang; Tzu Chieh Chou; Ting Yang Yu; Yu Wei Chang; Tai Yuan Huang; Kai Ming Yang; Cheng Ta Ko; Yu Hua Chen; Tzyy Jang Tseng; Kuan-Neng Chen

doi:10.1109/TCPMT.2017.2720468

Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration

Yu Tao Yang, Tzu Chieh Chou, Ting Yang Yu, Yu Wei Chang, Tai Yuan Huang, Kai Ming Yang, Cheng Ta Ko, Yu Hua Chen, Tzyy Jang Tseng, Kuan-Neng Chen^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 °C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.

Original language	English
Article number	7987804
Pages (from-to)	1560-1566
Number of pages	7
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/TCPMT.2017.2720468
State	Published - 1 Sep 2017

Keywords

3-D heterogeneous integration
Cu-Cu direct bonding
finite-element method (FEM) simulation

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Yang, Y. T., Chou, T. C., Yu, T. Y., Chang, Y. W., Huang, T. Y., Yang, K. M., Ko, C. T., Chen, Y. H., Tseng, T. J., & Chen, K.-N. (2017). Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration. IEEE Transactions on Components, Packaging and Manufacturing Technology, 7(9), 1560-1566. Article 7987804. https://doi.org/10.1109/TCPMT.2017.2720468

@article{d01d1499a2e145a2992b30bc1188e15e,

title = "Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration",

abstract = "Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 °C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.",

keywords = "3-D heterogeneous integration, Cu-Cu direct bonding, finite-element method (FEM) simulation",

author = "Yang, {Yu Tao} and Chou, {Tzu Chieh} and Yu, {Ting Yang} and Chang, {Yu Wei} and Huang, {Tai Yuan} and Yang, {Kai Ming} and Ko, {Cheng Ta} and Chen, {Yu Hua} and Tseng, {Tzyy Jang} and Kuan-Neng Chen",

year = "2017",

month = sep,

day = "1",

doi = "10.1109/TCPMT.2017.2720468",

language = "English",

volume = "7",

pages = "1560--1566",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

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Yang, YT, Chou, TC, Yu, TY, Chang, YW, Huang, TY, Yang, KM, Ko, CT, Chen, YH, Tseng, TJ & Chen, K-N 2017, 'Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration', IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 7, no. 9, 7987804, pp. 1560-1566. https://doi.org/10.1109/TCPMT.2017.2720468

TY - JOUR

T1 - Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration

AU - Yang, Yu Tao

AU - Chou, Tzu Chieh

AU - Yu, Ting Yang

AU - Chang, Yu Wei

AU - Huang, Tai Yuan

AU - Yang, Kai Ming

AU - Ko, Cheng Ta

AU - Chen, Yu Hua

AU - Tseng, Tzyy Jang

AU - Chen, Kuan-Neng

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 °C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.

AB - Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 °C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.

KW - 3-D heterogeneous integration

KW - Cu-Cu direct bonding

KW - finite-element method (FEM) simulation

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ER -

Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration

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