Low Temperature Cu-Cu Bonding with Electroless Deposited Metal Passivation for Fine-Pitch 3D Packaging

Yuan Chiu Huang, Demin Liu, Kuma Hsiung, Tzu Chieh Chou, Han Wen Hu, Arvind Sundarrajan, Hsin Chi Chang, Yi Yu Pan, Ming Wei Weng, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, electroplated Cu-Cu bonding with electroless plating passivation on Cu surface can be achieved at a low bonding temperature. Compared with other low temperature bonding schemes, electroplated Cu and electroless plated passivation in this work is time-saving, high throughput, and high yield. After a pretreatment process, chip-level bonding with the good bonding quality can be achieved at 180 ℃ under atmosphere. The morphology of the electroless plated passivation surface was characterized by the energy dispersive X-ray spectroscopy (EDX), and the bonding quality was investigated by the analyses of scanning electron microscope (SEM). In addition, electrical measurements were performed to evaluate the electrical properties of the bonding structure.

Original languageEnglish
Title of host publicationProceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages377-382
Number of pages6
ISBN (Electronic)9780738145235
DOIs
StatePublished - 2021
Event71st IEEE Electronic Components and Technology Conference, ECTC 2021 - Virtual, Online, United States
Duration: 1 Jun 20214 Jul 2021

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2021-June
ISSN (Print)0569-5503

Conference

Conference71st IEEE Electronic Components and Technology Conference, ECTC 2021
Country/TerritoryUnited States
CityVirtual, Online
Period1/06/214/07/21

Keywords

  • 3D IC
  • Chip-to-chip bonding
  • Electroless plating
  • Low temperature bonding

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